2015n65c33代替20n60s5可以用吗?

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20N65C3 供应信息 IC Datasheet 数据表 (1/7 页)
按型号查询:
超级结MOSFET
[Super Junction MOSFET]
&&20N65C3PDF文件:
超级结MOSFET[Super Junction MOSFET]
文件大小:&&508 KPDF页数:
&&7 页联系供应商:&& 品牌Logo:
&&&&NCEPOWER [ WUXI NCE POWER SEMICONDUCTOR CO., LTD ]
<font color=#N65C3&&
原装优势现货&
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<font color=#N65C3&&
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<font color=#N65C3&&
INF进口原&
NCE20N65TPb-Free ProductNCE N-ChannelEnhancement Mode Power MOSFETGeneral DescriptionTheseries of devicesuse advanced super junctiontechnology and design to provide excellent RDS(ON)with lowgate charge. This super junction MOSFET fits the industry’sAC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applications.VDSRDS(ON)ID65019020VmOhmAFeatures●Newtechnology for high voltage device●Lowon-resistance and low conduction losses●smallpackage●UltraLow Gate Charge cause lower driving requirements●100%Avalanche TestedApplication●●●Power factor correction(PFC)Switched mode power supplies(SMPS)Uninterruptible Power Supply(UPS)Schematic diagramPackage Marking And Ordering InformationDeviceNCE20N65TDevice PackageTO-247Marking20N65C3TO-247Absolute Maximum Ratings (TC=25℃)ParameterSymbolDrain-Source Voltage (VGS=0V)VDSGate-Source Voltage (VDS=0V)VGSContinuous Drain Current at Tc=25°CID (DC)Continuous Drain Current at Tc=100°CID (DC)(Note 1)IDM (pluse)Pulsed drain currentTable 1.Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj =125 °CMaximum Power Dissipation(Tc=25℃)Derate above 25°C(Note 2)NCE20N65T650±302012.560502081.6769020UnitVVAAAdv/dtV/nsWW/°CPDEASIARSingle pulse avalanche energyAvalanche current(Note 1)mJAWuxi NCE Power Semiconductor Co., LtdPage 1v1.0下载中文网
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20N65C3器件资料
器件摘要:
Wuxi NCE Power Semiconductor Co., Ltd
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON)
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
● New technology for high voltage device
● Low on-resistance and low conduction losses
● small package
● Ultra Low Gate Charge cause lower driving requirements
● 100% Avalanche Tested
Application
● Power factor correction( PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply( UPS)
Package Marking And Ordering Information
Device Package Marking
NCE20N65T TO-247 20N65C3
Absolute Maximum Ratings (T
Parameter Symbol NCE20N65T Unit
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V) VGS ± 30 V
Continuous Drain Current
at Tc=25°C I
Continuous Drain Current
at Tc=100°C I
Pulsed drain current
IDM (pluse)
Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj =
dv/dt 50 V/ns
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy
Avalanche current
Schematic diagram
更多器件搜索就在笔记本电源适配器里的20nc65c3是否能用20N60C3代替_百度知道
笔记本电源适配器里的20nc65c3是否能用20N60C3代替
提问者采纳
但是另外一种说法是,那也是可以正常使用的,只要配置的电源适配器中的电流小于或等于原来的适配器按道理来说最好是用一种型号的
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接头一样基本上能用
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