有什么可以代替fcpf场效应管20n60参数

来源：蜘蛛抓取(WebSpider) 时间：2017-09-17 05:37 标签： 20n60
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cbulogin.center.eu13Server is OKMOSFET. Datasheet pdf. Equivalent Type Designator: 20N60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel Maximum Power Dissipation (Pd): 416
W Maximum Drain-Source Voltage |Vds|: 600
V Maximum Gate-Source Voltage |Vgs|: 30
V Maximum Drain Current |Id|: 20
A Maximum Junction Temperature (Tj): 150
掳C Rise Time (tr): 130
nS Drain-Source Capacitance (Cd): 330
pF Maximum Drain-Source On-State Resistance (Rds): 0.32
Ohm Package: TO-3P_TO-247_TO-230
- MOSFET Cross-Reference Search&
Datasheet (PDF)1.1.
Size:750K _upd-mosfet锘緼ugust 2007
FCA20N60S / FCA20N60S_F109
600V N-Channel MOSFET
Features Description
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