EUV Mask Blank Fabrication & Metrology
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Extreme Ultraviolet (EUV) lithography is under development to succeed 157nm lithography for commercial IC manufacturing for the 45nm technology node as defined by the ITRS 2001 Lithography Roadmap. EUV masks pose many manufacturing and technical challenges to meet the future commercial needs. Although some EUV mask manufacturing processes can be extended from current optical masks, many new issues arise due to transitioning to all reflective multi‐layer mirror system with patterned features versus conventional optical masks. EUV lithography operation at 13.4 – 13.5 nm wavelength requires optimal multi‐layer performance including peak reflectance, wavelength matching to the optical system, and very low defect levels. The Low Thermal Expansion Material (LTEM) that is used as a substrate for the multi‐layer reflector also requires demanding performance levels including Coefficient of Thermal Expansion (CTE), flatness, and roughness to support EUV mask needs. Performance improvements as large as several orders of magnitude are needed for some of these parameters. To aid these developments, specialized metrology tools are needed. These tools fall into two categories: Manufacturing process inspections tools include flatness interferometry, atomic force microscopy, EUV reflectometry, defect inspection, and others. Analytical tools include scanning electron microscopy, X‐Ray Diffraction, ion beam milling, and others used for problem solving. Both metrology types will play a major role in the successful development of EUV masks to meet the 45nm node requirements. This paper will review many applicable metrology techniques in addition to those listed, describe the application to EUV mask blank development or manufacturing, show problem solving examples of the techniques, and highlight particular problems or areas of need. (C) 2003 American Institute of PhysicsDo you want to read the rest of this article?Request full-text
ArticleFull-text availableSep 2003Conference PaperApril 2013 · CD and shape control of extreme ultraviolet lithography (EUVL) structures is critical to ensure patterning performance at the 10 nm technology node and beyond. The optimum focus/dose control by EUV scanner is critical for CD uniformity, and the scanner depends on reliable and rapid metrology feedback to maintain control. The latest advances in scatterometry such as ellipsometry (SE),... [Show full abstract]Conference PaperOctober 2017Conference PaperNovember 2014Conference PaperMay 2016Full-text links:
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Verification and Validation of a Numerical Wave Tank Using Waves2FOAM
Abstract: Clean energy systems have been investigated recently by the researchers of
the University of New Mexico to increase the efficiency specifically in the
solar tower technology. Similar to solar energy, wave power harnesses energy
that comes from the sun. Solar irradiation causes wind by changing the
pressure, and wind gives its momentum to the ocean surface which produces
waves. Modeling and simulation (M&S) of free surface flow can be a very useful
tool for the wave energy industry. However, if these tools are to be relied
upon, their accuracy must be tested and shown to be sound. In this
investigation, we focus on verification and validation (V&V) of wave tank flow
M&S. The Volume of Fluid (VOF) model was applied to perform transient
computational fluid dynamics (CFD) analysis using the numerical simulation
software OpenFOAM. To assess V&V, the height of the free surface flow was
considered as the system response quantity (SRQ). Stokes theory (fifth order)
was utilized as the most accurate available approximation of the exact solution
to measure the order of accuracy of the discretized mathematical model which is
known as code verification. Data collected during model-scale testing at the
Naval Surface Warfare Center, Carderock Division (NSWCCD) Maneuvering and
Seakeeping (MASK) basin were utilized to validate the computational results.
The CFD domain consists of a two-dimensional plane representing the region of
interest of the wave basin which has several wave height measurement probes.
Our simulation results were compared to the data from one of these probes in
order to conduct the V&V analysis. Code verification and comparison with
experimental values demonstrate the accuracy and efficiency of our model.
Fluid Dynamics (physics.flu-dyn); Computational Physics (physics.comp-ph)
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From: Nima Fathi []
[v1] Mon, 23 Jul :21 GMTOptimization of the Formula of Smoothing Repair Mask with Blumea Balsamifera(L.) DC. by Central Composite Design-Response Surface Methodology--《Flavour Fragrance Cosmetics》2017年06期
Optimization of the Formula of Smoothing Repair Mask with Blumea Balsamifera(L.) DC. by Central Composite Design-Response Surface Methodology
HU XWANG KXIE Xiao-PANG Yu-Tropical Crops Genetic Resources Institute,Chinese Academy of Tropical Agricultural Sciences/Key Laboratory of Crop Gene Resources and Germplasm Enhancement in Southern CHainan Provincial Engineering Research Center for Blumea BCenter for Post-Doctoral Research/National Resource Center for Chinese Materia Medica,China Academy of Chinese Medical S
To optimize the formula of smoothing repair mask with Blumea Balsamifera(L.) DC,the mass fraction of glycerinum,carbomer and 1,3-butanediol were used as the major influence factors.The appearance evaluation and moisture retention under high humidity and low wet conditions were used as evaluation indices.And the overall desirability with normalized process was determined as the final effect value.The mathematical model about index and factors was established by multiple linear regression and binomial fitting.Then overlay contour plots and response surface were delineated.The optimal formulation parameters were predicted by response surface methodology and verified.The optimal conditions were mass ratio of 5.2% glycerinum,0.76% carbomer and 3% 1,3-butanediol.Mean bias between observed and predicted values was 4.81%,less than 5%.Central composite design-response surface methodology is convenient to use and has satisfactory predictability.It could be available for optimizing the formula of smoothing repair mask with Blumea Balsamifera(L.) DC.
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